Presentation Details
| 20.7% Efficient CdSeTe thin-film solar cells by ex-situ bismuth (Bi) doping Sabin Neupane1, Deng-Bing Li1, Manoj Jamrkattel1, Nicholas Miller2, Kiran Lamichhane1, Sanjeeb Budhathoki1, Alisha Adhikari1, Ujjwal Dhakal1, Hamim Sharif1, Ebin Bastola1, Adam Phillips1, Feng Yan3, James Becker2, Randy Ellingson1, Michael Heben1, Yanfa Yan1. 1University of Toledo, PVIC, TOLEDO, OH, USA.2First Solar Inc, Perrysburg, OH, USA.3Arizona State University, Tempe, AZ, USA |
Abstract
Post-deposition annealing is crucial for the ex-situ doping process in cadmium-selenide-telluride (CdSeTe) based solar cells. It provides the necessary energy for dopant diffusion into the absorber. Using bismuth trifluoride (BiF3) as a Bi source and applying ex-situ doping, we have previously demonstrated efficient CdSeTe solar cells. Here, by optimizing dopant concentration and annealing temperature, we successfully demonstrated a new high power conversion efficiency (PCE) with Bi doping. With a dopant concentration of 125 mg/mL and an annealing temperature of 260 °C for 12 minutes, the best-performing CdSeTe cell achieved a PCE of 20.7% with an FF of 77.7%.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.