Presentation Details
| Probing Strain-induced Ion Migration in 2D Polycrystalline Halide Perovskite Thin Films by In-situ KPFM (yes) Tanzeela Yousaf1, Jonghon Han2, Jincheol Kim2, Jan Seidel1, . 1University of New South Wales, Sydney, Australia, Sydney, Australia.2Macquarie University, Sydney, Australia |
Abstract
Flexible perovskite materials are a prospect for future wearable devices with improved mechanical stability and efficiency. Yet, several factors hinder the improvement of flexible device performance, especially the ambient stability of 3D perovskite materials. 2D perovskite materials can overcome some of these limitations and are a model system to understand stress-induced phenomena to improve the long-term stability of flexible devices. In this study, carrier dynamics of 2D polycrystalline halide perovskite thin films (PEA2MA4Pb5I16) were studied under external compressive and tensile strain, as well as light illumination, using advanced scanning microscopy (SPM). The surface photovoltage under white light illumination was reduced by ~50mV for both mild tensile and compressive strains (±0.1-0.2%). Moreover, in bias-dependent KPFM measurements, the observed ionic movement was higher under both tensile and compressive strains. Associated surface potential relaxation times after biasing were reduced by ~30% under tensile strain compared to ~70% under compressive strain. This work shows evidence for increased recombination centre defects and the following changes in electronic and ionic properties under external strain. It further provides guidance for the practical use of 2D perovskite materials in flexible devices by investigating their mechanical durability and stability required for optoelectronic applications in the real world.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.
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