Presentation Details
| Correlating Annealing-Induced Electronic and Chemical Degradation of Silicon Heterojunction Cells (yes) Margaret Zeile1, 2, Andrew V.Teplyakov2, Ujjwal K.Das1. 1Institute of Energy Conversion, Newark, DE, USA.2Department of Chemistry and Biochemistry, Newark, DE, USA |
Abstract
Silicon heterojunction solar cells were subjected to high-temperature annealing up to 315°C to observe electronic and chemical changes occurring within the cell layers and at cell interfaces. While open-circuit voltage loss was observed over the annealing range, fill factor loss as a result of increased series resistance was found to be driving cell efficiency degradation. Time-of-flight secondary ion mass spectrometry allowed for the identification of hydrogen migration from within the p-type amorphous hydrogenated silicon layer [(a)-Si:H] and at its interface with indium tin oxide (ITO) as the primary source of VOC loss. Series resistance-based losses were attributed to the growth of a thick SiOx layer between the ITO/doped a-Si:H interfaces. This layer is shown to disproportionately affect band alignment at the back surface field of the cell.
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