Presentation Details
| High Temperature Characterization of Emitters for Thermophotovoltaics (yes) Titilope M.Dada, Eric J.Tervo. University of Wisconsin-Madison, Madison, WI, USA |
Abstract
Thermophotovoltaic (TPV) system performance depends strongly on spectral control. Emission and absorption of low-energy sub-bandgap photons detracts from TPV efficiency, so near-unity combined reflectance of the cell and emitter is needed below the bandgap energy. Selective emitters can reduce the burden on cell reflectance by suppressing low energy emission and enhancing emission near the cell bandgap. However, many proposed selective emitters have not been demonstrated due to challenges in accurate high temperature characterization. Conventional approaches based on blackbody cavities or “reference samples” (e.g., carbon nanotubes, carbon tape, graphite) suffer from geometry mismatch, uncertain emissivity, and instability above ~500 °C. Direct high-temperature reflectance measurements with standard configurations are complicated by strong thermal emissions from the hot sample that can saturate the detector. To address this, we developed a reliable high temperature reflectance measurement method using an FTIR spectrometer, a high-temperature stage, and a customized optical configuration for measurement.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.
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