Presentation Details
| Investigating the effects of processing conditions on carrier dynamics in single crystal CdTe:As grown by molecular beam epitaxy Alex J.Ashley1, Hongling Lott2, Andrea T.Mathew2, Eric Colegrove2, Matthew O.Reese2, Jason B.Baxter1. 1Drexel University, Philadelphia, PA, USA.2National Laboratory of the Rockies, Golden, CO, USA |
Abstract
Understanding the nature of recombination and its dependence on both defects within the grain interior and processing conditions are essential for engineering materials for a higher open-circuit voltage (Voc) and power conversion efficiency in thin film photovoltaic (PV) devices. In this paper, we report on the mobility and photoexcited carrier lifetime of arsenic-doped CdTe films grown by molecular beam epitaxy. Single crystals reduce the effects of grain boundaries, allowing investigation of bulk properties. Carrier dynamics were measured by time-resolved terahertz spectroscopy, which can indicate upper limits of mobilities over small length scales. Cd overpressure and cyclic Te annealing during film growth can greatly impact the incorporation and activation of As dopant, as well as the intra-grain mobility and photoexcited carrier lifetime. Increased As incorporation with low activation resulted in faster non-radiative recombination and reduced mobility.
No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.
No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.
Content Locked. Log into a registered attendee account to access this presentation.