Presentation Details
| Zn-Alloyed SnO2 Buffer Layers for Thin Film CdSeTe/CdTe Solar Cells (yes) Zeyad Elsayed1, Samuel E.Machin1, Ana Jurado-Estrada1, Luis C.Infante-Ortega1, Mustafa Togay1, Luksa Kujovic1, Sam Davis1, Zhaoxia Zhou1, Stuart Robertson1, Jake W.Bowers1, John M.Walls1, Pascal Jundt2, Bettina Spaeth2, Christian Drost2, Robert Arndt2. 1Centre for Renewable Energy Systems Technology (CREST), Loughborough University, Loughborough, United Kingdom.2CTF Solar GmbH, Dresden, Germany |
Abstract
Zn-alloyed SnO2 (ZTO) buffer layers with varying Zn content (0-37 at.%) were deposited onto commercial F:SnO2-coated soda-lime glass using RF sputtering. These buffers were fabricated into complete CdSeTe/CdTe photovoltaic devices at CTF Solar GmbH. Devices and films were characterised to determine the impact of Zn content on device performance and front-interface properties. The best performing device used a ZTO buffer containing 6 at.% Zn, which delivered a higher efficiency than the intrinsic SnO2 control, primarily through an increase in FF. Increasing the Zn content to 17 and 37 at.% resulted in a reduction in efficiency. Cross-sectional STEM and EDX revealed that all ZTO layers form continuous coverage on the FTO substrate; the 6 at.% ZTO buffer forms a conformal, well-adhered interface with CdSeTe, whereas the higher-Zn buffers exhibit pronounced Zn diffusion into the CdSeTe absorber and increased voiding at the buffer/CdSeTe interface.
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