Presentation Details
| Selenium Diffusion in Uniform CdSexTe1-x Absorbers Using Correlative CL and EBSD Samuel E.Machin1, Kieran M.Curson1, Luksa Kujovic1, John M.Walls1, Stuart Robertson2, Zhaoxia Zhou2, Pascal Jundt3, Bettina Spath3, Christian Drost3, Robert Arndt3. 1Centre for Renewable Energy Systems Technology (CREST), Loughborough, Leicester, United Kingdom.2Loughborough Materials Characterisation Centre (LMCCC), Loughborough, Leicester, United Kingdom.3CTF Solar GmbH, Dresden, Germany |
Abstract
Nominally uniform CdSeTe absorbers are designed to maintain a constant bandgap through the absorber thickness. This is achieved by depositing a multilayer structure of CdTe and CdSe to develop uniformity through interdiffusion during the CdCl2 activation step. In this work, spatially resolved cathodoluminescence (CL) combined with electron backscatter diffraction (EBSD) is used to investigate the selenium redistribution in uniform CdSeTe absorbers subjected to CdCl₂ activation with systematically varied activation severity. Despite the absence of intentional grading, activation induces front–rear bandgap variations, with increasing activation severity leading to a rear enriched selenium profile. Correlative CL–EBSD analysis indicates that microstructural features influence selenium redistribution, highlighting the role of processing induced diffusion in determining the effective bandgap profile of nominally uniform CdSeTe absorbers.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.