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Presentation Details
| Investigating the ‘Ringing’ Feature Around Grain Boundaries of CdSeTe/CdTe Solar Cells Using Cathodoluminescence Aoshi Yang, Jacques Kenyon, Zhaoxia Zhou, Stuart Robertson, Michael Walls. Loughborough University, Loughborough, United Kingdom |
Abstract
This study investigates a distinct feature of high -photoactivity around grain boundaries in arsenic-doped CdSeTe/CdTe Photovoltaic absorbers, referred to as a ‘ringing’ feature. This study uses STEM-CL to characterize the cross section of the absorber at the nanometre scale. Findings include a thinner grain boundary in CL map at front of the absorber, which confirms the passivation effect of Se. Both sub-band and band-to-band emission is observed in the ringing. A potential well is observed near grain boundary, which may contribute to the ringing phenomenon by enhancing carrier recombination. The reason for formation of the potential well is linked to the built up of Se at that side of grain boundary. Interpreting these ‘ringing’ features will help to improve our understanding of the performance of arsenic doped CdSeTe/CdTe devices.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.