Presentation Details
Influence of Cooling Processes on All-sputtered Sub-micrometer Cu(In, Ga)(S, Se)2 Flexible Solar Cells

António J.N.Oliveira1, João B.Vilão1, 2, André F.Violas1, Ana R.Pires1, Bárbara L.Sieira1, 2, 3, Xavier L.Pinheiro1, 2, 4, Ricardo M.Silva1, Inês Morais2, Pedro Patrício2, Jennifer P.Teixeira1, Joaquim P.Leitão2, 3, Paulo A.Fernandes1, 5, Pedro M.P.Salomé1, 2.

1International Iberian Nanotechnology Laboratory, Braga, Portugal.2Departamento de Física da Universidade de Aveiro, Aveiro, Portugal.3i3N, University of Aveiro, Aveiro, Portugal.4CICECO, Aveiro Institute of Materials, University of Aveiro, Aveiro, Portugal.5CIETI, Departamento de Física, Instituto Superior de Engenharia do Porto, Porto, Portugal

Abstract


Magnetron sputtering represents a promising approach for industrial Cu(In,Ga)(S,Se)2 (CIGSSe) solar cell development. Nevertheless, achieving high-performance all-sputtered CIGSSe devices requires careful optimization of growth and post-deposition processes. In this work, sub-micrometer flexible CIGSSe solar cells are developed on stainless steel substrates using a continuous-vacuum sputtering process. The impact of post-deposition cooling following CIGSSe growth at 600-700 °C is systematically investigated. First, a rapid quenching step is added to the standard process to avoid chalcogen evaporation. Whilst rapid quenching enables for a best cell efficiency improvement of 1%, additional characterization suggests that it leads to a higher density of defects. Thereafter, a H2S pre-cooling step was included, and it results in an absolute best cell efficiency enhancement of up to 2.4%, underscoring the impact of chalcogen management and defect control during the cooling phase. These findings show the importance of the post-deposition cooling step in improving the performance of sputtered CIGSSe solar cells and support the development of scalable, high-efficiency industrial fabrication routes.

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