Presentation Details
| Improved CdTe metallization through use of internal energy referencing in X-ray photoelectron spectroscopy Ryan Muzzio1, Christopher P.Muzzillo1, Ed Sartor1, Chungho Lee2, Matthew O.Reese1, Craig L.Perkins1. 1National Laboratory of the Rockies, Golden, CO, USA.2First Solar Inc, Santa Clara, CA, USA |
Abstract
Contacts and interfaces are an essential component to all devices. Efficient and selective carrier transport and low defect density are top priorities in contact development. Photoemission techniques can determine interfacial carrier barriers and identify chemical reactions that have occurred. The work presented here promotes a method of using internal energy referencing of photoelectron transitions that is generalizable to any system that has more than one resolvable core level such as III-Vs, perovskites, and CdTe. As a case-study, metal back contacts for CdTe photovoltaics are used. First, chemical and structural details of a CdTe-Au interface are unraveled. A hole barrier is determined from XPS and is found to correspond well with barriers from device modeling. We show two strategies for minimizing XPS-assessed chemical perturbations, and that they lead to significantly increasing the power conversion efficiency for photovoltaic cells.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.