Presentation Details
| GRAPHENE/INP SCHOTTKY PHOTOVOLTAICS WITH QUANTUM-DOT INTERMEDIATE-BAND ENHANCEMENT FOR LUNAR AM0 OPERATION UNDER COUPLED TEMPERATURE–FLUENCE STRESS Argyrios Varonides. University of Scranton, Scranton, PA, USA |
Abstract
Space photovoltaic devices must sustain long-duration operation under extreme environmental stressors, including wide temperature swings and persistent irradiation by high-energy protons and electrons. These stressors generate deep-level defects, modify interfacial transport pathways, and progressively degrade voltage and fill factor through non-ideal transport mechanisms. Conventional performance models typically treat temperature effects and irradiation effects separately, which limits predictive capability for mission-relevant conditions such as the lunar surface under AM0 illumination. In this work we propose and model a graphene/InP Schottky photovoltaic architecture enhanced by a quantum-dot intermediate-band absorber, where the graphene contact is treated not as a passive transparent electrode but as an active transport-engineering element capable of improving barrier stability and suppressing non-ideal transport evolution. The proposed framework introduces a unified illuminated current-balance model in which the forward Schottky current competes against the sum of bulk photocurrent and an intermediate-band-assisted photocurrent gain arising from sub-bandgap absorption and carrier escape. The dominant physics is expressed through an effective transport-state evolution parameterized by an ideality factor that depends on both temperature and irradiation fluence. A PVSC-oriented parameter extraction workflow is outlined: temperature-resolved dark current fitting is used to extract the saturation current, effective barrier height, and ideality factor; irradiation sweeps at fixed temperature are used to quantify transport-state evolution, barrier drift with fluence, and an interfacial degradation function; and sub-bandgap EQE measurements are used to fit intermediate-band escape and collection parameters. The extracted parameters enable prediction of AM0 current–voltage performance surfaces and comparative maps of open-circuit voltage, short-circuit current, fill factor, and efficiency as functions of temperature and fluence for graphene/InP Schottky, graphene/InP intermediate-band Schottky, and conventional InP pn reference devices.
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