Presentation Details
| Response times of single- and multi-junction InGaAs photonic power converters Karin Hinzer1, Osbel Almora2, Alexandre W.Walker3, D.Paige Wilson1, Carmine Pellegrino4, Meghan N.Beattie1, Lluis F.Marsal2, David Lackner4, Henning Helmers4. 1SUNLAB, Nexus for Quantum Technologies Institute, University of Ottawa, Ottawa, ON, Canada.2Department of Electrical and Automatic Electronic Engineering, Universitat Rovira i Virgili, Tarragona, Spain.3Quantum Nanotechnologies Research Centre, National Research Council Canada, Ottawa, ON, Canada.4Fraunhofer Institute for Solar Energy Systems ISE, Freiburg, Germany |
Abstract
Photonic power converters (PPCs) offer a robust alternative to metallic cabling due to immunity to electromagnetic interference and improved safety in harsh environments. This work investigates the resistance, capacitance, and quasi‑open‑circuit response times of single‑junction (1J) and ten‑junction (10J) In₀.₅₃Ga₀.₄₇As‑based PPCs under 1520 nm laser irradiation using current–voltage and impedance spectroscopy. The 1J and 10J devices exhibit characteristic response times of 314 ns and 911 ns at 88 mW cm⁻², respectively. A methodology for comparing average sub‑cell behavior enables direct evaluation of multi‑junction structures. The results provide guidelines for optimizing PPCs in simultaneous power‑and‑data‑transfer systems where response time is critical.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.