Presentation Details
| Modeling of Open Circuit Voltage Degradation in Thin SHJ Cells under Proton Irradiation Izak Baranowski1, Christiana Honsberg1, Stuart Bowden2, Dragica Vasileska1, Ian R.Sellers3, Vincent R.Whiteside3, Nicole Harmon3, Bibhudutta Rout4, Stephen M.Goodnick1. 1Arizona State University, Tempe, AZ, USA.2Solestial Solar, Tempe, AZ, USA.3University at Buffalo, Buffalo, NY, USA.4University of North Texas, Denton, TX, USA |
Abstract
Photovoltaics for space applications must contend with radiation damage. While understanding of radiation damage in a material sense is a mature science, the understanding in the context of device behavior is less well understood. Thin silicon heterojunction (SHJ) solar cells have potential for radiation hard design due an observed reversal of radiation induced carrier lifetime degradation after an annealing step. As a first step in understanding this process, the damage caused by the initial damage needs to be quantified. In this work we demonstrate the results of coupling the damage calculated from SRIM on an SHJ solar cell under proton irradiation with Silvaco TCAD drift-diffusion simulations in order to quantify the degradation of device behavior. The results are then compared to experimentally measured implied Voc of irradiated SHJ cell structures.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.