Presentation Details
| Advancements in Sputtered Tunnel Oxide and Doped Polysilicon Based Fully Passivated-Contact IBC Solar Cells Vaibhav V.Kuruganti1, Volker Linß2, Thomas Buck1, Eric Schneiderlöchner2, Valentin D.Mihailetchi1. 1International Solar Energy Research Center Konstanz (ISC), Konstanz, Germany.2Von Ardenne GmbH, Dresden, Germany |
Abstract
This work presents key advancements in interdigitated back-contact (IBC) solar cells employing sputtered tunnel oxide (TO) and doped poly-Si fully passivating contacts. We highlight the advantages of this cell architecture over conventional tunnel oxide passivated contact (TOPCon) IBC solar cells. Our study presents a systematic investigation of the individual building blocks of sputtered TOPCon IBC solar cells, including sputtered plasma TO, physical vapor deposition (PVD) TO/n⁺ poly-Si stacks, PVD TO/p⁺ poly-Si stacks, and the IBC patterning approach. The sputter TO deposition parameters governs a transition in the oxidation mechanism, shifting the dominant process from plasma-assisted oxidation to sputter-driven oxidation. Excellent passivation quality is demonstrated for the PVD TO/ PVD n⁺ poly-Si stack with iVoc exceeding 735 mV and J0 below 2 fA/cm2, whereas the PVD TO/ PVD p+ poly-Si stack suffers from poor passivation quality due to lower bulk lifetime; further process optimization is ongoing. Additionally, we present a novel IBC patterning strategy based on selective nanosecond green-laser ablation of a capping amorphous silicon (a-Si) layer using a top-hat beam profile, achieving high-fidelity patterning while mitigating damage and parasitic doping in the underlying sputtered functional multilayers.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.