Presentation Details
| Controlled Solvent Evaporation for AgBi₁Sb₁I₇-Based Lead-Free Triple-Mesoscopic Perovskite Solar Cells Mai A Alharbi1, Tapas K Mallick1, 2. 1University of Exeter, penryn, United Kingdom.2Imam Abdulrahman bin Faisal University, Dammam, Saudi Arabia |
Abstract
Triple-mesoscopic perovskite solar cells (T-MPSCs) have attracted increasing attention due to their simplified fabrication, low-cost materials, and excellent stability. In this architecture, the perovskite absorber is infiltrated into a TiO₂/ZrO₂/carbon mesoscopic scaffold, making crystallization highly sensitive to thermal annealing and solvent evaporation. However, achieving high-quality lead-free perovskite films within this structure still presents significant difficulties. Here, we report a semi-closed solvent evaporation-controlled annealing (SCSEA) strategy using a petri-dish-assisted arrangement to control solvent removal during film formation under ambient conditions. In this approach, the perovskite device is placed beneath a partially confined petri dish, creating a controlled solvent vapor environment that suppresses rapid evaporation. For the first time, Sb-rich AgBi₁Sb₁I₇ is successfully integrated into a T-MPSC architecture, enabling systematic investigation of crystallization behavior and device performance. The semi-closed treatment significantly enhances film crystallinity and morphology, which causes large grain size, improved uniformity, and reduced pinhole density. As a result, devices with the architecture FTO/c-TiO₂/mp-TiO₂/ZrO₂/carbon/AgBi₁Sb₁I₇ exhibit an increase in power conversion efficiency (PCE) from 0.41% (untreated) to 0.63% after SCSEA. Moreover, the unencapsulated treatment devices demonstrate good operational stability, retaining approximately 90% of their initial efficiency after 1000 h of ambient storage under fluctuating humidity (RH 40–60%). This study presents a scalable semi-closed solvent evaporation strategy for lead-free T-MPSCs and provides new insight into the role of solvent-evaporation regulation in governing crystallization, film quality, and long-term device stability
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.