Presentation Details
| CdTe Solar Cells with In Situ Phosphorous Doping Luis C.Infante-Ortega, Kara B.Kile, Kiran Lamichhane, Ebin Bastola, Prabodika N.Kaluarachchi, Zulkifl Hussain, Manoj K.Jamarkattel, Thomas Fiducia, Abasi Abudulimu, Ambalanath Shan, Sabin Neupane, Yanfa Yan, Nikolas Podraza, Randy J.Ellingson, Michael J.Heben, Adam B.Phillips. University of Toledo, Toledo, OH, USA |
Abstract
Substitutional doping of a group V element into a Te site is a promising development for CdTe photovoltaics. Here we successfully incorporated phosphorous into a CdTe absorber stack, achieving secondary ion mass spectroscopy (SIMS) concentrations of up to 1019 cm-3 with low oxygen levels throughout. Absorbers were fabricated using phosphine cracking as the doping technique, with P levels being highly controllable by changing the gas flow rate. Samples were treated in a controlled-environment CdCl2 heat treatment (CHT) system built in a glovebox which kept oxygen and H2O levels low during all stages of the treatment. It was found that CdCl2 treating the absorbers in a controlled-oxygen environment yielded strong XRD randomization and higher photoluminescence (PL) signals at high temperatures with certain solutions, as well as uniformly distributing P throughout the absorber while keeping oxygen low according to SIMS analysis. PL intensities were dependent on the temperature and CdCl2 solution used. New devices using several P doping conditions and different CHT treatments are in development and will be presented alongside conductivity, SEM, J-V and EQE data.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.