Presentation Details
| Effect of Selenium on Carrier Type in CdSeTe-Alloyed Photoabsorbers Investigated by PDL Hall Effect Mustafa Togay1, Isuru Lakmal2, Ebin Bastola2, Zeyad Elsayed1, Robert D.Ellis1, Adam M.Law1, Luksa Kujovic1, Kiran Lamichhane2, Sabin Neupane2, Adam B.Phillips2, Randy J.Ellingson2, Yanfa Yan2, Michael J.Heben2, Jake W.Bowers1, J.Michael Walls1. 1CREST, Wolfson School of Mechanical, Electrical and Manufacturing Engineering, Loughborough University, Leicestershire, LE11 3TU, United Kingdom.2Wright Center for Photovoltaics Innovation and Commercialization, University of Toledo, Toledo, OH, USA |
Abstract
Cadmium selenide telluride (CdSeTe) alloyed absorbers have enabled record efficiency CdTe-based solar cells, yet their electrical transport properties and majority carrier type remains poorly understood. In this study, the electrical properties of CdTe, CdSe, and CdSeTe thin films were investigated using an ultra-sensitive parallel dipole line (PDL) Hall effect system. Selenium concentration was found to significantly influence carrier concentration, mobility, and conductivity type. CdTe films exhibited p-type behaviour, while increasing selenium content led to the emergence of n-type conductivity in CdSeTe alloys. Copper (Cu) doping changed the carrier type and the carrier transport behaviour depending on precise composition. These results highlight the need for direct electrical characterisation of CdSeTe absorbers to better understand device operation.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.