Presentation Details
| Investigating the ‘Ringing’ Feature Around Grain Boundaries of CdSeTe/CdTeSolar CellsUsing Cathodoluminescence Aoshi Yang, Jacques Kenyon, Zhaoxia Zhou, Stuart Robertson, Michael Walls. Loughborough University, Loughborough, United Kingdom |
Abstract
This study investigates a distinct feature of high -photoactivity around grain boundaries in arsenic-doped CdSeTe/CdTe Photovoltaic absorbers, referred to as a ‘ringing’ feature. This study uses STEM-CL to characterize the cross section of the absorber at the nanometre scale. Findings include a thinner grain boundary width in specific CdSeTe regions which confirms the passivation effect of Se. Both sub-band and band-to-band emission is observed in the ringing. Potential well trapping is observed and is likely to be one of the reasons for the ringing phenomena due to a high density of carrier recombination. The reason for formation of the trap is linked to the built up of Se at that side of grain boundary which acts as a barrier to diffusion. Interpreting these ‘ringing’ features will help to improve our understanding of the performance of arsenic doped CdSeTe/CdTe devices.
No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.
No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.
Content Locked. Log into a registered attendee account to access this presentation.