Presentation Details
| Hole Mobility and Scattering Mechanisms in CdTe Solar Cells Timur Sukhanov1, Eric Colegrove2, Matthew O.Reese2, Sivalingam Sivananthan1, 3. 1University of Illinois at Chicago, Chicago, IL, USA.2National Laboratory of the Rockies, Golden, CO, USA.3Sivananthan Laboratories, Bolingbrook, IL, USA |
Abstract
In the present work, we perform numerical calculation of hole mobility in p-type CdTe over a wide temperature range (50-300 K), accounting for multiple scattering mechanisms and using ranges of acceptor and compensating donor densities that may be present in modern CdTe based solar devices. The calculated mobility exhibits a low-temperature regime dominated by ionized dopant scattering, leading to a characteristic mobility peak, followed by a gradual reduction at intermediate and high temperatures due to increasing phonon scattering contributions. The position of the mobility peak is primarily governed by dopant ionization energy, while the room-temperature mobility decreases with increasing dopant concentration. Consequently, low hole mobility reduces diffusion length and collection efficiency, directly impacting VOC and fill factor. Future work will focus on extracting and correlating key curve parameters with physical input variables and introducing Se alloying with associated scattering mechanisms. This approach aims to provide a more complete picture of carrier transport in Cd(Se,Te), grounding modelling assumptions and informing new research directions.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.
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