Presentation Details
| Developing a Phosphorus source for Doping of CdTe Shahrin Iqbal1, 2, Kevin Dobson1, Brian McCandless1, William Shafarman1, 2. 1Institute of Energy Conversion, University of Delaware, Newark, DE, USA.2Department.of Materials Science and Engineering, University of Delaware, Newark, DE, USA |
Abstract
This study develops cadmium phosphide (Cd₃P₂) as a controlled phosphorus dopant source for CdTe using close-spaced sublimation. The Cd:P atomic ratio in the deposited film is used as the primary metric to evaluate the source quality and growth control. Cd:P = 1.5 in the film, matching the Cd3P2 source material, is needed for a reproducible process. The source-to-substrate temperature differential (ΔT) is determined to be a critical parameter. At high ΔT=100°C with source temperatures of 500–550°C, Cd:P ratios near the target range are achieved but result in excessively thick, non-uniform films, making them unsuitable for precise dopant delivery. When the process is optimized by lowering Δt to 25°C and reducing deposition time, the Cd:P ratio stabilizes close to 1.5 with controlled growth rate. These results highlight that precise control of ΔT is critical to achieve stoichiometric thin Cd₃P₂ layers with minimal source degradation, enabling reproducible run-to-run close-space sublimation of phosphorus for controlled CdTe doping.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.
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