Presentation Details
| Stressor Layers Engineering for High-Yield Detachment of Nanomembranes on Porous Germanium Substrates Brieuc Mével1, 2, Artur Turala1, 2, Ahmed Ayari1, 2, Azmat Ali1, 2, Radouane En-Nadir1, 2, Gbenro Folaranmi1, 2, Alexandre Chapotot3, Jinyoun Cho3, Nawfal Blal1, 2, Kristof Dessein3, Abderraouf Boucherif1, 2. 1Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 boulev, Sherbrooke, QC, Canada.2Laboratoire Nanotechnologies Nanosystèmes (LN2) - IRL3463, CNRS, Université de Sherbrooke, INSA Ly, Sherbrooke, QC, Canada.3Umicore Electro-Optic Materials, Watertorenstraat 33, 2250, Olen, Belgium, Olen, Belgium |
Abstract
Reducing the consumption of germanium (Ge) in the production of III–V/Ge space solar cells is essential to improve the availability of this critical material. The PEELER (Porous germanium Efficient Epitaxial LayEr Release) process addresses this challenge by enabling epitaxial growth of Ge nanomembranes on porous Ge substrates while allowing substrate reuse. The Stressor-layer-induced Porous-layer Detachment (SPeD) method is employed to detach the Ge nanomembranes produced by the PEELER process. In this work, we investigate the operational window of the SPeD detachment method and evaluate its scalability for solar cell fabrication. The study focuses on the influence of weak-layer morphology, particularly the pillar surface coverage, on detachment conditions and membrane integrity. The results demonstrate that the SPeD method enables reliable detachment across a wide range of pillar coverages (4–55%). These findings define the process window for weak-layer morphologies compatible with reliable detachment after solar cell growth. Wafer-scale detachment was demonstrated on full 100 mm wafers, with a yield of 93.5%.
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