Presentation Details
| Low Earth orbit radiation study of ultra-thin silicon solar cells Vincent R.Whiteside1, Nicole Harmon1, Brandon K.Durant1, Mohin Sharma2, Bibhudutta Rout2, Christiana Honsberg3, Stuart Bowden4, Ian R.Sellers1. 1Univerity at Buffalo SUNY, Buffalo, NY, USA.2University of North Texas, Denton, TX, USA.3Arizona State University, Tempe, AZ, USA.4Solestial, Inc., Tempe, AZ, USA |
Abstract
Prior to metallization ultra-thin silicon solar cells (~70 µm) are irradiated with 3 different energies with fluences that correspond to the annual extremes experienced in low Earth orbit. Stopping and range of ions in matter simulations are performed to model proton trajectories calculating ionizing, non-ionizing losses, as well as vacancy distributions. A suite of measurements that consist of current density-voltage, external/internal quantum efficiency, suns/Voc, and contactless photoconductance lifetime measurements are performed before and after irradiation. The correlation of simulations and measurements are in agreement for all cases with one notable exception. The 25 keV irradiation results for the 5 e13 protons/cm2 has an interesting conundrum ‒ the measured photoconductance lifetimes in correlation with the quantum efficiency measurements seem to buck the trends observed with respect to the rest of the devices. Further investigations are warranted to more fully understand this anomaly.
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