Presentation Details
| Effect of temperature on the forward and reverse electrical performance of InAs/GaAs1-xSbx quantum dot solar cells Chunxue Ji1, 2, Yidi Bao1, 2, Xiaoling Chen1, 2, Xiaoyang Zhao1, 2, Wen Liu1, 2, Xiaodong Wang1, 2. 1Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Ch, BEIJING, China.2Center of Materials Science and Optoelectronics Engineering & School of Integrated Circuits, Univers, BEIJING, China |
Abstract
This work investigates the temperature dependence of the current-voltage characteristics of InAs/GaAs1-xSbx quantum dot intermediate band solar cells (IBSCs), which is crucial for the stable operation of the IBSCs in practical environments. We conducted forward current-voltage measurements on InAs/GaAs1-xSbx quantum dot IBSCs at different temperatures and analyzed the trends of open-circuit voltage, short-circuit current, and conversion efficiency of solar cells with different Sb compositions as a function of temperature. In addition, reverse bias caused by factors such as surface shading may lead to breakdown and failure of the solar cells. Therefore, we further explored the reverse current-voltage characteristics of quantum dot IBSCs and discussed the breakdown mechanism.
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