Presentation Details
| Metamorphic 1 eV InGaAs/InP superlattice solar cells Adrian Birge, Yiteng Wang, R.Corey White, Sarah Su-O Youn, Chi Jiang, Bora Kim, Devon O.Lee, Minjoo Larry Lee. University of Illinois Urbana-Champaign, Urbana, IL, USA |
Abstract
We present metamorphic In0.31Ga0.69As/InP superlattices designed to improve the radiation hardness of 1 eV absorbers. The superlattices are strain-balanced to the graded buffers on which they are grown and exhibit a threading dislocation density of 9×105 cm-2, comparable to the lowest-reported values. After rapid thermal annealing, superlattice solar cell devices have a peak EQE = 66.2% without anti-reflection coatings and JSC,EQE = 27.43 mA/cm2, showing that the thin InP barriers permit efficient carrier transport. Preliminary lighted IV measurements show comparable open-circuit voltage to bulk InGaAs cells, and future studies will examine cell performance after irradiation with 1 MeV electrons. This work provides a potential pathway towards radiation-hard 1 eV solar cells and is broadly applicable to a wide range of InGaAsP digital alloys.
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