Presentation Details
| Selective Coating of MoS2 Transport Layer on Patterned-ITO Substrate by Modified Interfacial Assembly for PV Applications Muntaser Almansoori, Ammar Nayfeh. Khalifa University, Abu Dhabi, United Arab Emirates |
Abstract
Molybdenum disulfide (MoS2) has emerged as a critical material for next-generation nanoelectronics and energy storage devices due to its distinct semiconducting properties. While solution-processing routes like interfacial assembly offer scalable alternatives to Chemical Vapor Deposition (CVD), achieving selective deposition on patterned substrates remains a significant challenge. This work addresses the limitations of interfacial assembly where water acts as the bottom phase, which typically results in MoS2 adhering to hydrophilic glass supports rather than the target Indium Tin Oxide (ITO) patterns. We report a modified interfacial assembly technique utilizinga water/chloroform interface to achieve selective MoS2 coating on ITO acting as charge transport layer. By leveraging the high density of chloroform and specific wettability dynamics where water preferentially wets glass, the system creates a concave interface that traps chloroform bubbles specifically over ITO surfaces. This mechanism forces suspended MoS2 flakes to deposit exclusively on the ITO regions, effectively avoiding the glass substrate.
No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.
No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.
Content Locked. Log into a registered attendee account to access this presentation.