Presentation Details
| MOVPE Growth and Spalling of III-V solar cells on GaAs(211) Myles A Steiner1, Nicholas Yoo1, 2, Sarah Collins1, Theresa Saenz1, Tadeas Hanus1, John Goldsmith1, Anica Neumann1, Jacob Cordell1, Michelle Young1, Shaniah Greene1, Corinne Packard2, 3, William McMahon1. 1National Laboratory of the Rockies, Golden, CO, USA.2Colorado School of Mines, Golden, CO, USA.3University of Southern California, Los Angeles, CA, USA |
Abstract
III-V solar cells can be exfoliated from the substrate through a controlled mechanical spalling technique, as a means of substrate reuse. (211)-oriented substrates rather than (100) substrates have been shown to leave the surface unfaceted and more suitable to regrowth. We demonstrate good MOVPE growth of GaAs and GaInP/GaAs solar cells on (211)A substrates, as well as spalling of full 2” wafers and subsequent growth on the spalled surface with minimal repreparation.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.