Presentation Details
| Highly radiation-resistant n-InGaP/p-GaAs heterojunction solar cells Tetsuya Nakamura1, Maui Hino2, Meita Asami3, Warakorn Yanwachirakul4, Kentaroh Watanabe2, Shota Yamasaki5, Shin-ichiro Sato5, Naotsugu Nagasawa5, Takeshi Ohshima5, 6, Hidefumi Akiyama7, Yoshitaka Okada2, Masakazu Sugiyama2. 1Japan Aerospace Exploration Agency (JAXA), Tsukuba, Japan.2Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan.3University of Miyazaki, Miyazaki, Japan.4Chulalongkorn University, Bangkok, Thailand.5National Institutes for Quantum Science and Technology (QST), Takasaki, Japan.6Tohoku University, Sendai, Japan.7Institute for Solid State Physics, The University of Tokyo, Kashiwa, Japan |
Abstract
In this study, we improved the radiation resistance of n-InGaP/p-GaAs heterojunction solar cells using two approaches. The first approach is to form a depletion region in the emitter layer made of a wide-bandgap InGaP. We experimentally demonstrated that this configuration reduces the radiation damage coefficient, which is related to the carrier lifetime in the depletion region. The second approach is to increase the doping concentration of p-GaAs base layer, thereby increasing the radiative recombination rate in the neutral region and relatively suppressing non-radiative recombination caused by radiation-induced defects. These strategies not only improved radiation resistance but also contribute to improving the initial conversion efficiency.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.