Presentation Details
| Development of high-temperature resistant double side (DS) TOPCon architecture for the bottom Si solar cells of perovskite/Si tandem cell Sagnik Dasgupta1, Kwan Hong Min1, Wook-Jin Choi1, Ajeet Rohatgi1, Young-Woo Ok1, Yanfa Yan2, Zhaoning Song2. 1Georgia Institute of Technology, Atlanta, GA, USA.2University of Toledo, Toledo, OH, USA |
Abstract
In this work, we will present thin double-side tunnel oxide passivated contacts (DS-TOPCon) structures for application in Perovskite/Si tandem Solar cells as the bottom Si cell. We optimized the POCl3 nitrogen carrier flow rate to achieve highest iVoc in the ex-situ doped n-poly-Si and optimized boron concentration in the APCVD grown boron-doped glass for the ex-situ doped p-poly-Si. Finally, we achieved the iVoc of >720 mV with thin DS-TOPCon precursors using a single-step, two-tier annealing process with SiNx capping. Next, we developed and optimized an ITO deposition process which was able to maintain iVoc of >720 mV without any degradation. We investigated a NiOx layer as a hole-selective layer on top of ITO-coated n-TOPCon, resulting in a Voc of ~725 mV after 300 °C. Tandem cells are being fabricated by depositing the perovskite on top of the hole selective NiOx layer and will be reported at the time of conference.
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