Presentation Details
| Insight into the Mechanism of Reversible UVID in TOPCon Solar Cells using a non-destructive characterisation Pengfei Zhang, Caixia Li, Ziheng Liu, Jialiang Huang, Jialin Cong, Jingwen Cao, Martin A.Green, Xiaojing Hao. UNSW, Sydney, Sydney, Australia |
Abstract
Ultraviolet light-induced degradation (UVID) has been reported across mainstream high-efficiency Silicon (Si) solar cell architectures, including tunnel oxide passivated contact (TOPCon) solar cells, causing up to 10% efficiency loss after continuous exposure to high UV doses. Encouragingly, this degradation has also been discovered recoverable under certain conditions, such as light soaking. However, due to the absence of a clear mechanistic understanding of both the degradation and recovery process, current testing protocols and stability metrics fall short of capturing the true UV resilience of these devices. Establishing a fundamental understanding of UVID is therefore critical for developing more predictive testing frameworks and durable cell architectures under real-world operating conditions. In this work, the UVID of TOPCon silicon solar cells are effectively recovered using light soaking. This recoverable macroscopic cell performance is subsequently found correlated with two reversible changes at the materials level: front surface reflectance by optical transmission of SiNx and a Boron-doped Si Raman peak by UV Raman spectroscopy. With further atom probe tomography (APT) investigation and theoretical modeling, the mechanisms of this reversible UVID and light soaking induced recovery (LSIR) process are identified to be caused by the movement of H atoms across the AlOx/Si interface. In addition, this non-destructive material level characterisation platform established in this work enables effective capture of the degree of UVID resistance in the design of durable TOPCon solar cells with the potential of in-line quality control.
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