Presentation Details
| Exploring the Performance of Hybrid Interdigitated Back Contact Silicon Solar Cells in Relation to the Thickness of Silicon Wafers Xiaoning Ru1, 2, Feng Ye1, Jiansheng Chen1, Yunlai Yuan1, Fengxiu Miao1, Jinsheng Zhang Zhang1, Hua Wu1, Yunpeng Li1, Miao Yang1, Huizhao Sun1, Minghao Qu1, Jianbo Wang1, Junxiong Lu1, Feilin Ping1, Liang Fang1, Xixiang Xu1. 1LONGi Central R&D Institute, Xi'an, China.2School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, China |
Abstract
The hybrid interdigitated back contact (HIBC) silicon solar cell, utilizing a combination of high-temperature and low-temperature contacts, demonstrated the highest conversion efficiency of 27.9% among silicon single-junction cells. However, its industrialization progress is limited by the complex manufacturing process and high production cost. In recent years, remarkable breakthroughs have been witnessed in BC technology. HPBC and TBC technology, upgraded BC technology based on PERC and TOPCon, have gradually entered the stage of mass production. This study is dedicated to exploring the impact of silicon wafer thickness, from 103 μm to 138 μm, during the mass production of HIBC solar cells. As the thickness of silicon wafers is a crucial factor affecting the cost, material utilization, and performance of solar cells, understanding its influence on HIBC solar cells is of great significance.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.