Presentation Details
| High Voltage CdSe Solar Cells with Optimized p-interfaces Purnendu Kartikay, Payton Bills, Vikram Dalal, . Iowa State University, Ames, IA, USA |
Abstract
Cadmium Selenide (CdSe), with its optimal band gap of 1.72 eV, is a favorable semiconductor for use as the top cell in tandem solar cell architectures. In this work, we fabricated CdSe-based solar cells employing thermally evaporated CdSe films, along with poly(3-hexylthiophene) (PTAA) as p-layer. Device with PTAA as sole p-type contact exhibit poor performance, highlighting significant losses at the PTAA/Au interface. Introducing a thin MoO3 interlayer between PTAA and Au significantly enhances the device performance. Furthermore, controlled air annealing of the MoO3 layer prior to Au deposition improves its electrical conductivity and results in improved Jsc of CdSe/PTAA/MoO3/Au devices. The results show that MoO3 interfacial engineering strategy helps in optimizing charge extraction and device performance in CdSe solar cells. We also report high voltage all inorganic CdSe solar cells with a-(Si,C):H p layer that eliminates the stability challenges with organic PTAA layer. I.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.
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