Presentation Details
State-of-the-art characterization by XPS, UPS and LEIPS of the interfacial band structure of ZTO as ETL on kesterite-based solar cells

Laura Garcia-Carreras1, Yudania Sánchez2, Umair Razi2, Jacob Andrade-Arvizu2, Alejandro Pérez-Rodríguez2, 4, Yuancai Gong3, Alex Jimenez-Arguijo3, Edgardo Saucedo3, Tariq Jawhari1, 4, Lorenzo Calvo-Barrio1, 4.

1Centres Científics i Tecnològics (CCiTUB), Universitat de Barcelona, Lluis Solé i Sabarís 1, 080, Barcelona, Spain.2Institut de Recerca en Energia de Catalunya (IREC), Jardins de les Dones de Negre, 1 - Pl.2, 08930, Sant Adrià de Besòs, Spain.3Photovoltaic Group Electronic Engineering Department, Polytechnic University of Catalonia (UPC), Av., Sant Adrià de Besòs, Spain.4IN2UB, Departament d’Enginyeria Electrònica i Biomèdica, Universitat de Barcelona, Martí i Fran, Barcelona, Spain

Abstract


In this work we present a systematic characterization of solar devices based on a Mo/CZTSe/Zn1-xSnxO/ZnO/ITO architecture, entirely fabricated using scalable physical and chemical vapor deposition methods. The key novelty of this work lies in the use of a comprehensive spectroscopic approach combining X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS) and low-energy inverse photoemission spectroscopy (LEIPS). With XPS it will be possible to understand the chemical behavior of the different layers, monitoring the bonding and interdiffusion of the elements on the layers during the growth and post treatments, while with UPS and LEIPS we will determine the full experimental band diagrams of the heterostructures. These two combined techniques will allow us to calculate with high precision the position of the Fermi level (work function, WF), the valence band maximum (VBM) and the conduction band minimum (CBM), making it possible the construction of experimental band diagrams and the identification of interfacial band alignments and potential barrier formations.

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