Presentation Details
| Shingled Module Integration of Monolithic Two‑Terminal III-V//Si Tandem Solar Cells Exceeding 30 % Module Efficiency Jonas D.De Rose, Leonhard Böck, Tadeo Schweigstill, Jan Benick, Ralph Müller, Malte Klitzke, David Lackner, Torsten Rößler, Gerald Siefer, Holger Neuhaus, Florian Clement, Oliver Höhn, Frank Dimroth. Fraunhofer ISE, Freiburg, Germany |
Abstract
We report on the realization of a photovoltaic module based on monolithic two‑terminal III–V on silicon tandem solar cells. The devices consist of GaInP/AlGaAs//Si tandem cells interconnected by electrically conductive adhesive in an overlapping shingle layout. Module integration is realized by inexpensive commercially available materials. The resulting module has an active area of 218 cm² and reaches a one sun AM1.5g efficiency of 31.3 %, with an open‑circuit voltage of 25.48 V, a short‑circuit current of 0.318 A and a fill factor of 84.3 %. This demonstrates, to our knowledge, the first module‑level implementation of monolithic III–V//Si two‑terminal solar cells with an area exceeding 200 cm² (“sub module” class).
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.
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