Presentation Details
| Efficiency Improvement of Cu3BiS3 Thin Film Solar Cell using NiO Hole Transport Layer Sandip Das, . Kennesaw State University, Marietta, GA, USA |
Abstract
Cu₃BiS₃ has gained attention as a promising absorber for low-cost, environmentally benign, and earth-abundant thin-film photovoltaic technologies. In this study, we investigate the performance improvement of Cu₃BiS₃ solar cells through the incorporation of NiO as a hole transport material (HTM). Numerical simulations using SCAPS-1D demonstrate that the solar cell structure including a 200 nm thick NiO layer at the rear contact outperforms the conventional cell without a NiO. The proposed heterojunction solar cell architecture, with an Al/ITO/ZnO/CdS/Cu₃BiS₃/NiO/Mo/SLG structure achieved an open-circuit voltage of 586 mV and a power conversion efficiency of 11.15% under AM1.5 irradiance with only 1.0 µm-thick absorber layer. These values correspond to an approximately 17% increase in short-circuit current density and approximately 22% improvement in efficiency compared to the reference cell. The findings highlight that NiO or other similar HTMs can significantly boost the efficiency of thin film Cu₃BiS₃-based heterojunction solar cells.
No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.
No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.
Content Locked. Log into a registered attendee account to access this presentation.