Presentation Details
| 2D MoTe2 Back Surface Passivation for CdTe Thin-Film Solar Cells Karthika Haridas1, Shubhra Bansal1, 2. 1Material Science and Engineering, Purdue University, West Lafayette, IN, USA.2Associate Professor of Mechanical Engineering and Materials Engineering, Purdue University, West Lafayette, IN, USA |
Abstract
Cadmium telluride (CdTe) remains one of the leading commercialized thin-film photovoltaic technologies because of its near-optimal bandgap (~1.45 eV), high absorption coefficient and scalable manufacturing. Despite recent advances that have increased efficiency to 23.1%, CdTe solar cells remain limited by an open-circuit voltage (VOC) deficit, primarily due to the non-radiative recombination at the back interface. This work presents the study of 2D transition metal dichalcogenides (2D TMDCs) as a back surface passivation layer for superstrate F:SnOX/CdS/CdTe/metal solar cells through SCAPS-1D numerical simulation and experimental characterization of commercially available few monolayer films grown by chemical vapor deposition (CVD). Among all TMDCs evaluated via device simulations, MoTe2 yielded the most significant performance enhancement, increasing the power conversion efficiency (PCE) to 30.19%, together with improvement in long-wavelength external quantum efficiency (EQE) response. Characterization of 2D MoTe2 films grown on ITO and sapphire show substrate dependence. Thermal analysis showed that 2H-MoTe2 undergoes oxidation above 150°C, indicating the need for low-temperature processing for back surface passivation of superstrate-based CdTe solar cells.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.
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