Presentation Details
| Single Crystal Growth of Arsenic Doped and Phosphorus Doped Cadmium Selenium Telluride (CdSexTe1-x) to Improve CdTe Thin Film Photovoltaics Benjamin Montag1, Darius Kuciauskas2, Cody Rietcheck1, Echo Larson1. 1Radiation Detection Technologies, Manhattan, KS, USA.2National Laboratory of the Rockies, Golden, CO, USA |
Abstract
Group-V (Gp-V) doping, instead of Cu, has enabled increased hole density, while alloying Se in CdTe has increased the carrier lifetime. Together these improvements have resulted in record devices with Voc >900mV and efficiency >23%. The present record cell level efficiency is only about 70% of the theoretical maximum efficiency of ~32%. To increase cell efficiency, the open-circuit voltage must be increased beyond ~900mV. It is estimated that a CdSeTe absorber doped with P or As, with net acceptor concentration >1016 cm-3 with majority of the added dopants (>50%) activated, can potentially reduce the voltage deficit. Radiation Detection Technologies, Inc. is leading a study where single crystals of CdSexTe1-x doped with P and As are being grown from Cd-rich solution, using the already available infrastructure currently used to manufacture group-V doped CdTe. Single crystal samples were processed, prepared, and delivered to NLR, ASU, and Loughborough University for fundamental studies to understand performance limitations.
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