Presentation Details
| Exploring Parameters Affecting the Etch Rate of Sacrificial Layer in Inverted Metamorphic Multijunction Solar Cells Bernice Mae Yu Jeco-Espaldon, Yusuke Oteki, Yoshitaka Okada. The University of Tokyo, Meguro-ku, Japan |
Abstract
Inverted metamorphic multijunction solar cells (IMM-MJSCs) allow high-efficiency device designs but rely on high-cost III–V compound semiconductors. A cost-reduction strategy is epitaxial lift-off (ELO), which enables substrate reuse. However, ELO of IMM-MJSCs often suffers from slow sacrificial-layer etching and film cracking caused by internal stress. In this study, bath-method ELO was carried out on commercial InGaP/GaAs/InGaAs IMM triple-junction solar cells while varying etchant temperature, ambient humidity, and Ag back-electrode thickness. The work examines how these parameters influence the lateral AlAs etch rate and the occurrence of cracks in the separated films. Within the studied parameter ranges (etchant temperatures of 30–70 °C, ambient humidity below and above 30%, and Ag thicknesses around 10–14 µm), etch rates of about 3.3 mm/hr were achieved together with substantially reduced cracking. These results define a process window where bath-method ELO provides faster etching and mechanically robust films for substrate recycling and thin-film transfer in III–V solar cell fabrication.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.
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