Presentation Details
| Ge Epitaxy on Engineered Ge Substrates for An Active Ge Junction in Multi-Junction Space Solar Cells Jinyoun Cho1, Ella Susann Supik2, Alexandre Chapotot1, Waldemar Schreiber2, Michael Haslinger3, Aitana Cano4, Rubén Fortín4, Rajiv Sharma1, Louis Dechambre3, Priyanka Proost1, Ivan Garcia4, Robin Vanuytven1, Charlotte Weiss2, Jeremy Horion3, Damian Wiame3, Kristof Dessein1. 1Umicore, Olen, Belgium.2Fraunhofer ISE, Freiburg, Germany.3Aerospacelab, Mont-Saint-Guibert, Belgium.4Universidad Politécnica de Madrid, Madrid, Spain |
Abstract
The growing demand for multi-junction solar cells challenges the supply chain to find solutions that enable large-scale production without sacrificing performance or radiation resistance. Engineered germanium substrates from Umicore offer a promising solution. By forming a thin Ge foil and performing epitaxial growth of Ge, thin triple-junction (3J) cells can be produced at solar cell manufacturers with added flexibility and drastically reduced Ge consumption, easing Ge, a critical raw material, supply constraints. We present an Eng. Ge structure supporting 20 µm Ge epitaxy and subsequent III-V growth, while preserving detachment capability for the final device. The Ge layer shows topography and roughness comparable to bulk Ge, and optimized doping ensures its suitability as an active Ge subcell. The epitaxially grown Ge layer exhibits surface quality comparable to bulk, as shown by similar 1J-InGaP solar cell performance on both substrates.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.
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