Presentation Details
| Al-Containing Hydride Vapor Phase Epitaxy for Scalable III-V Solar Cell Production Ryuji Oshima1, Takeshi Nishida1, Akinori Ubukata2, Hiroki Tokunaga2, Takeyoshi Sugaya1. 1National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan.2Taiyo Nippon Sanso Corporation, Tsukuba, Japan |
Abstract
This study addresses the challenge of reducing the manufacturing cost of III–V solar cells for terrestrial and mobile applications. A large-scale single-chamber hydride vapor phase epitaxy (HVPE) system was developed to enable 6-inch wafer growth and integration of Al-containing layers by generating AlCl₃ at a reduced temperature (~500 °C), minimizing quartz corrosion. Using this system, AlxGa₁₋xAs layers (x <0.3) were grown with excellent surface morphology (RMS roughness <1 nm) and high-quality photoluminescence. Additionally, epitaxial liftoff (ELO) of a 3 μm GaAs layer using an AlAs sacrificial layer was successfully demonstrated, confirming the potential for substrate reuse. GaAs solar cells fabricated with a rear heterojunction structure achieved a conversion efficiency of 21.2%, marking a significant step toward scalable, cost-effective III–V photovoltaics.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.