Presentation Details
| Ag-free Solar Cell Featuring Passivating Contacts with Screen-printed Front Al and Rear Cu Contact with Laser-enhanced Contact Optimization Ruohan Zhong1, Byungsul Min2, Vijaykumar Upadhyaya1, Sebastian Junge2, Young Woo Ok1, Brian Rounsaville1, Rolf Brendel2, Ajeet Rohatgi1. 1Georgia Institute of Technology, ATLANTA, GA, USA.2Institute for Solar Energy Research Hamelin, Emmerthal, Germany |
Abstract
The increasing consumption of silver (Ag) and its associated cost remains an obstacle to scaling photovoltaic manufacturing toward the terawatt level. Recently, 24.2% POLysilicon on Oxide (POLO) back junction solar cell with the p-type substrate has been reported by ISFH, showing the success of integrating aluminum contact with laser contact openings on the front side. Additionally, 24.3% Tunnel Oxide Passivating Contact (TOPCon) front junction cell with the n-type substrate has been reported with screen-printed copper (Cu) contacting n+ polysilicon. Since Al and Cu contacts have been independently proven compatible with p-type surface and n-type doped polysilicon, respectively, their combination enables a fully Ag-free solar cell with polysilicon passivating contacts. In this work, we propose Ag-free solar cell structures for both n-type and p-type base wafers, featuring Al metallization on the front side and Cu metallization on the rear polysilicon. The average implied open-circuit voltage for both n-type and p-type unmetallized poly-Si passivating contact solar cell precursors approached around 735 mV after firing, indicating excellent passivation quality. The highest efficiencies achieved were 21.8% for the front junction n-TOPCon solar cell and 21.7% for the back junction POLO solar cell with the help of the laser-enhanced contact optimization process.
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