Presentation Details
| Understanding of Boron Diffusion Dynamics in In-situ and Ex-situ Doped p+ Poly-Si Passivating Contacts for p-type TOPCon Solar Cells Unsoo Kim, Yong-Jin Kim, Sang Hee Lee, Yunae Cho, Hyungwoo Kim, Kyung Taek Jeong, Hee-Eun Song. Korea Institute of Energy Research, Daejeon, South Korea |
Abstract
Poly-silicon (poly-Si) based passivating contacts have become a standard for high-efficiency silicon solar cells. While n-type TOPCon technology is mature, p-type TOPCon utilizing p-type wafers offers a cost-effective alternative by leveraging existing production lines. However, p-type passivating contacts (B-doped poly-Si) fabricated via industrial in-situ doping often exhibit inferior passivation quality compared to ex-situ methods. This study elucidates the boron (B) diffusion dynamics responsible for this discrepancy.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.
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