Presentation Details
| Multiscale Characterization of Aluminum Oxide Passivation Effects in UV-Susceptible TOPCon Photovoltaic Modules Dana B.Kern, Rebecca Wai, Harvey Guthrey, John Mangum, Chun-Sheng Jiang, Steve Johnston. National Laboratory of the Rockies, Golden, CO, USA |
Abstract
Recent studies identify UV-induced degradation (UVID) and an associated metastability in crystalline silicon (c-Si) photovoltaics (PV), including high efficiency n-type tunnel oxide passivated contact (TOPCon) technology. Several studies point toward aluminum oxide (Al2O3) passivation as a culprit in TOPCon UV sensitivity. However, direct microscopic analysis of this thin passivation layer on a textured c-Si surface from commercial modules has remained elusive, partly due to experimental difficulty of accessing the interface. Here, we present multiscale characterization of TOPCon front passivation in UVID-susceptible modules ranging from module-level performance, to cell-level characteristics of the passivation metastability, to nanoscale electrical and chemical properties associated with the Al2O3/SiNx/SiNxOy and its interface with the textured c-Si surface.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.