Presentation Details
| Critical look at the atmospheric Cu fire-through dielectric metallization for cost-effective and high efficiency silicon solar cells (yes) Donald Intal1, Sandra Huneycutt1, Abasifreke Ebong1, Ajeet Rohatgi2, Vijay Upadhyaya2, Sagnik Dasgupta2, Ruohan Zhong2, Thad Druffel3, Ruvini Dharmadasa3. 1University of North Carolina at Charlotte, Charlotte, NC, USA.2Georgia Institute of Technology, Atlanta, GA, USA.3Bert Thin Films LLC, Louisville, KY, USA |
Abstract
The formation of stable copper–silicide (Cu₃Si) interfaces is crucial for cost-effective, high-efficiency solar cells. However, copper’s diffusivity and electromigration issues pose challenges for contact stability. This study employs Laser-Enhanced Contact Optimization (LECO) to induce localized nano-scale Joule heating at the Cu–Si interface in phosphorus-doped p-PERC solar cells. High-resolution STEM and bright field analyses confirm stable Cu₃Si formation in LECO-treated samples, with significantly reduced material segregation compared to nonLECO samples. SEM and post-etch EDS mapping demonstrate improved chemical resistance and interface cleanliness. Electrically, LECO treatment reduces series resistance by a factor of 3, enhancing fill factor and efficiency while preserving diode quality. These results highlight LECO as a scalable method for reliable, silver-free solar cell metallization.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.