Presentation Details
| Alloy Engineering of BaZrS3 Chalcogenide Perovskite (yes) Kiruba Catherine Vincent1, Shubhanshu Agarwal1, Rohan Nalumachu1, Kim Kisslinger2, Rakesh Agrawal1. 1Purdue University, West Lafayette, IN, USA.2Brookhaven National Laboratory, Upton, NY, USA |
Abstract
Chalcogenide perovskites are an emerging class of materials, offering a blend of the optoelectronic advantages of lead halide perovskites with the intrinsic stability of traditional chalcogenides. Among the chalcogenide perovskites, BaZrS3 has emerged as a top candidate for photovoltaic applications. This work establishes alloy engineering as an effective strategy for tuning the optoelectronic properties of BaZrS3. In contrast to previous studies largely limited to high temperature solid state alloying routes that are incompatible with device integration, this work systematically investigates Hf, Nb and Ta as B-site alloying candidates in low temperature solution processed thin films. This enables wide bandgap tunability, spanning from 1.4 eV to 2.1 eV and provides unified mechanistic insights into structure property relationships. We further report the first solution processed thin films of BaNbS3 and BaTaS3 ternaries. These findings highlight alloy engineering as a viable and essential pathway towards high efficiency chalcogenide perovskite devices
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.