Presentation Details
| Annealing of Electron-beam Evaporated Nickel Oxide for Hole Transport Layers in p-i-n Perovskite Solar Cells Chaiwarut Santiwipharat, Kevin D.Dobson, Ujjwal K.Das, William N.Shafarman. Institute of Energy Conversion, University of Delaware, Newark, DE, USA |
Abstract
Nickel oxide (NiOX) has emerged as one of the most widely adopted hole transport layer (HTL) materials for p–i–n structured perovskite solar cells due to its excellent optical transparency, high hole mobility, and strong electron blocking capability. NiOX films can be deposited using both solution-processed and vapor phase techniques, with vapor deposition methods such as evaporation and sputtering typically relying on in situ oxygen flow to regulate film stoichiometry. While oxygen-assisted deposition is commonly used to achieve the desired oxidation state, post-deposition thermal annealing offers an alternative and potentially more controllable route for tuning the chemical and electronic properties of NiOX. In this study, we investigate the oxidation behavior of air-annealed NiOX films deposited by electron-beam evaporation using either Ni or NiO as the source material. We systematically examine the optical, surface chemical, and electrical characteristics of the resulting films as a function of annealing temperature and thickness. These NiOX layers are subsequently integrated into fully vapor processed p–i–n perovskite solar cells to evaluate their hole transporting performance. Our results reveal clear correlations between annealing temperatures, NiOX thickness, and device performance, with open circuit voltages reaching up to 1.04 V. The findings highlight the importance of interface engineering between NiOX and the perovskite absorber to further enhance short circuit current and fill factor.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.