Presentation Details
| High Efficiency 2.1 eV Bandgap Inorganic CsPb(I, Br2) Perovskite Solar Cell Deposited Using Vacuum Deposition Shadab Soomro, Anders Peterson, Purnendu Kartikay, Vikram Dalal, . Iowa State University, Ames, IA, USA |
Abstract
Inorganic cesium lead iodide bromide (CsPbIBr2) perovskite solar cell with bandgap of ~2.1 eV is an optimal choice as the top cell in a 4 terminal tandem cell arrangement with CdTe as the bottom cell. Here, we report on sequential thermal evaporation of CsBr, PbBr2 and PbI2 to obtain CsPbIBr2 solar cell materials and devices. Sequential thermal evaporation enables the growth of highly uniform, pinhole-free CsPbIBr2 films with precise stoichiometric control and large grain sizes (~800 nm), overcoming limitations associated with solution-processed counterparts. Devices employing PTAA as the hole transport layer (HTL) achieve an open-circuit voltage (Voc) of 1.42 V, highest reported for vacuum-deposited CsPbIBr2 solar cells and gives efficiency of around 10%. We compared the performance of CsPbIBr2 device with PTAA and P3HT as HTL and observed that PTAA-based devices perform better due to favorable energy alignment. These results establish vacuum-deposited CsPbIBr2 as thermally stable absorber layer for integration with narrow-bandgap semiconductors, like CdSe or CdTe, potentially enabling efficient perovskite-chalcogenide tandem solar cells.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.