Presentation Details
| Decoupling Process Variables in 3-Stage CIGS : Phase and Composition Changes under Time/Pressure/Temperature Ju Chan Choi, Jin Ho Yang, Jae Ho Yun. Korea Institute of Energy Technology (KENTECH), NaJu-si, South Korea |
Abstract
Three-stage co-evaporation enables high-quality Cu(In,Ga)Se2 (CIGS) absorbers, yet reproducible growth for tandem bottom cells is frequently limited by coupled process variables. Here, we present a recipe-family framework that decouples key growth knobs and builds a practical process map using standard characterization. Stage-time effects are isolated by holding the recipe family constant while varying only the 2nd- or 3rd-stage deposition time. Process robustness is then quantified by introducing realistic perturbations in base pressure and substrate temperature within the same recipe family, to determine parameter sensitivity and tolerance windows. Correlated SEM, XRD, and EDS analyses link microstructure evolution, crystallographic signatures, and composition trajectories (e.g., CGI/GGI trends) across the designed comparison sets. Overall, this framework identifies the dominant process parameters and the acceptable process windows of three-stage growth, enabling reproducibility-oriented guidelines for tandem integration based on SEM/XRD/EDS analyses.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.
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