Presentation Details
| Dopant-Dependent Recombination Regimes and Carrier Extraction in High-Efficiency CdSeTe Solar Cells Abasi Abudulimu1, Chungho Lee2, Tyler Brau1, Scott L.Wenner1, Adam B.Phillips1, Michael J.Heben1, Randy J.Ellingson1. 1Wright Center for Photovoltaics Innovation and Commercialization (PVIC), Department of Physics and A, Toledo, OH, USA.2First Solar, Inc.California Technology Center (CTC), Santa Clara, CA, USA |
Abstract
Understanding how intentional dopants affect recombination and carrier extraction under operating conditions is critical for improving CdSeTe solar cells. Here, we study high-efficiency CdSeTe devices doped with Cu, As, and P, achieving power conversion efficiencies of ~18% (Cu) and ~21% (As, P). Using injection-dependent transient photovoltage and open-circuit voltage measurements over a wide range (10⁻⁴–30 suns), supported by transient photocurrent, photoluminescence, time-resolved PL, external radiative efficiency, and bias-dependent EQE, we compare experimentally extracted carrier lifetimes with theoretical recombination models. Cu-doped devices transition to radiative recombination near one sun, whereas As- and P-doped devices remain trap-assisted over a much broader injection range, enabling higher Voc. Voc–light-intensity slope analysis confirms distinct recombination regimes across dopants. Despite improved device performance, higher p-type doping provides only modest gains in defect-limited lifetime and introduces significantly slower carrier extraction. These results reveal a fundamental trade-off between recombination suppression and transport in highly doped CdSeTe solar cells.
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No part of this publication may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without the prior written permission of the author.
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