IEEE PVSC 49
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SPLTRAK Abstract Submission
Ultrathin III-V solar cells with light-trapping structures fabricated in situ using an HVPE reactor
Allison N. Perna1, Anna K. Braun1, Kevin L. Schulte2, John Simon2, Corinne E. Packard1, Aaron J. Ptak2
1Colorado School of Mines, Golden, CO, United States
/2National Renewable Energy Laboratory, Golden, CO, United States

We developed a back surface scattering technique for inverted III-V solar cells by texturing GaInP with HCl and PHin situ within a hydride vapor phase epitaxy (HVPE) reactor. Back surface texturing is a promising light management method for ultrathin solar cells to enhance photocurrent collection, however most methods demonstrated to date are expensive.  This fully in situ method is a potentially low-cost and high-throughput technique, in which the rear GaInP contact layer is textured via vapor phase etching and redeposition of Ga-rich GaInP. We demonstrate single junction GaAs solar cells with a relative 5% boost in short circuit current density for in situ back surface textured devices without any loss in open circuit voltage or fill factor. This work supports the development of low-cost ultrathin III-V photovoltaics.