IEEE PVSC 49
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SPLTRAK Abstract Submission
Study of Degradation of Cu (In& Ga)Se2 Solar Cell Parameters Due to Temperature
Rabee B. Alkhayat2& Dhurba R. Sapkota1
1University of Toledo, Toledo, OH, United States
/2University of Mosul, Mosul, Iraq

Copper indium gallium diselenide, Cu(In, Ga)Se2, thin-film has been completed by using thermal co-evaporation of Cu, In, Ga, and Se sources at a substrate temperature of 570°C. A CIGS solar cell with a 12% efficiency and a 1.5 μm absorber thickness has been completed. The thin film is characterized using UVVS, XRD, and SEM/EDS. The effects of temperature on the degradation of CIGS solar cells are also investigated. Furthermore, the degradation of cell characteristics suchlike open-circuit voltage (Voc), fill factor (FF), current density (Jsc), and efficiency (η) with temperature is examined. The value of cell characteristics like Voc and FF decreases significantly as the temperature increases. Although there is no clear trend in the Jsc value, overall cell efficiency is found to decrease with temperature. The ultimate purpose of this work is the optimization of narrow band-gap CIGS-related solar cells for the bottom layer in tandem devices.